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| NSBC114EPDXV6T1, NSBC114EPDXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EPDXV6T1 series, two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium. http://onsemi.com (3) R1 Q1 Q2 R2 (4) R1 (5) (6) (2) R2 (1) * * * * * 6 54 23 Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch Tape and Reel Lead Free Solder Plating 1 SOT-563 CASE 463A PLASTIC MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc MARKING DIAGRAM xx D THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature 1. FR-4 @ Minimum Pad RqJA TJ, Tstg TA = 25C RqJA TA = 25C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) -55 to +150 Unit mW mW/C C/W xx = Specific Device Code (see table on page 2) D = Date Code ORDERING INFORMATION Device Package Shipping 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel NSBC114EPDXV6T1 SOT-563 NSBC114EPDXV6T5 SOT-563 Unit mW Symbol PD DEVICE MARKING INFORMATION mW/C C/W C Preferred devices are recommended choices for future use and best overall value. See specific marking information in the device marking table on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2004 1 January, 2004 - Rev. 3 Publication Order Number: NSBC114EPDXV6/D NSBC114EPDXV6T1, NSBC114EPDXV6T5 DEVICE MARKING AND RESISTOR VALUES Device NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 (Note 2) NSBC143TPDXV6T1 (Note 2) NSBC113EPDXV6T1 (Note 2) NSBC123EPDXV6T1 (Note 2) NSBC143EPDXV6T1 (Note 2) NSBC143ZPDXV6T1 (Note 2) NSBC124XPDXV6T1 (Note 2) NSBC123JPDXV6T1 (Note 2) Package SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 Marking 11 12 13 14 15 16 30 31 32 33 34 35 R1 (kW) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 R2 (kW) 10 22 47 47 1.0 2.2 4.7 47 47 47 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 ICBO ICEO IEBO - - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 - - nAdc nAdc mAdc Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 V(BR)CBO V(BR)CEO Vdc Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 - 60 100 140 140 350 350 5.0 15 30 200 150 140 - - - - - - - - - - - - - 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) NSBC113EPDXV6T1/NSBC123EPDXV6T1 (IC = 10 mA, IB = 1 mA) NSBC114TPDXV6T1/NSBC143TPDXV6T1 NSBC143EPDXV6T1/NSBC143ZPDXV6T1/NSBC124XPDXV6T1 VCE(sat) 2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 2 NSBC114EPDXV6T1, NSBC114EPDXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Characteristic ON CHARACTERISTICS (Note 3) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 NSBC144EPDXV6T1 VOH NSBC113EPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC143ZPDXV6T1 NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 - 0.8 0.055 0.38 0.038 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 - 1.0 0.1 0.47 0.047 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 - 1.2 0.185 0.56 0.056 kW - - - - - - - - - - - - 4.9 - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - Vdc Vdc Symbol Min Typ Max Unit (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor Resistor Ratio NSBC114EPDXV6T1/NSBC124EPDXV6T1/NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1/NSBC143TPDXV6T1 NSBC113EPDXV6T1/NSBC123EPDXV6T1/NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 R1/R2 2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 NSBC114EPDXV6T1, NSBC114EPDXV6T5 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 -50 RqJA = 490C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve http://onsemi.com 4 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS - NSBC114EPDXV6T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 25C 0.1 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 100 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25C 100 75C IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 25C TA = -25C Cob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS - NSBC114EPDXV6T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = -25C 0.1 75C 25C TA = 75C 100 25C -25C 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25C 100 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 0 1 2 VO = 5 V 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS - NSBC124EPDXV6T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 25C 75C 1000 hFE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 0.1 100 0.01 0.001 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25C 100 IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 7 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS - NSBC124EPDXV6T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V 1 TA = -25C 25C TA = 75C 100 25C -25C 75C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 75C 10 25C TA = -25C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 10 75C 25C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS - NSBC144EPDXV6T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 1 TA = -25C 0.1 25C 75C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 1 0.1 0.01 25C TA = -25C VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 9 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS - NSBC144EPDXV6T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) TA = 75C 25C 100 -25C TA = -25C 0.1 75C 25C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 f = 1 MHz lE = 0 V TA = 25C 100 10 1 0.1 0.01 VO = 5 V 0 1 2 TA = 75C 25C -25C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) 0.001 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 10 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS - NSBC114YPDXV6T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 25C 75C hFE, DC CURRENT GAIN (NORMALIZED) 300 250 200 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 VCE = 10 TA = 75C 25C -25C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 36. Input Voltage versus Output Current http://onsemi.com 11 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS - NSBC114YPDXV6T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25C -25C TA = 75C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 37. VCE(sat) versus IC Figure 38. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25C TA = -25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 41. Input Voltage versus Output Current http://onsemi.com 12 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS - NSBC114TPDXV6T1 1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25C 1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25C VCE = 10 V VCE = 5.0 V VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 42. DC Current Gain - PNP Figure 43. DC Current Gain - NPN TYPICAL ELECTRICAL CHARACTERISTICS - NSBC143TPDXV6T1 1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25C 1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25C VCE = 10 V VCE = 5.0 V VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 44. DC Current Gain - PNP Figure 45. DC Current Gain - NPN http://onsemi.com 13 NSBC114EPDXV6T1, NSBC114EPDXV6T5 PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 A -X- C K 4 6 5 1 2 3 B -Y- S D G 5 6 PL M J XY 0.08 (0.003) DIM A B C D G J K S STYLE 1: PIN 1. 2. 3. 4. 5. 6. EMITTER 1 BASE 1 COLLECTOR 2 EMITTER 2 BASE 2 COLLECTOR 1 STYLE 2: PIN 1. 2. 3. 4. 5. 6. EMITTER 1 EMITTER2 BASE 2 COLLECTOR 2 BASE 1 COLLECTOR 1 STYLE 3: PIN 1. 2. 3. 4. 5. 6. CATHODE 1 CATHODE 1 ANODE/ANODE 2 CATHODE 2 CATHODE 2 ANODE/ANODE 1 STYLE 4: PIN 1. 2. 3. 4. 5. 6. COLLECTOR COLLECTOR BASE EMITTER COLLECTOR COLLECTOR SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 14 NSBC114EPDXV6/D |
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